INFLUENCE OF HEAT TREATMENTS AND IONIZING IRRADIATIONS ON CHARGE DISTRIBUTION AND NUMBER OF SURFACE STATES IN SI-SIO2 SYSTEM

被引:33
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KOOI, E
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10.1109/T-ED.1966.15675
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:238 / +
页数:1
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共 15 条
[1]  
BALK P, 1965 SPRING M EL SOC
[2]   EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM [J].
CHEROFF, G ;
FANG, F ;
HOCHBERG, F .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :416-&
[3]  
Kats A., 1962, PHILIPS RES REP, V17, P133
[4]   STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].
KERR, DR ;
LOGAN, JS ;
BURKHARDT, PJ ;
PLISKIN, WA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&
[5]  
KOOI E, 1965, PHILIPS RES REP, V20, P306
[6]  
KOOI E, 1965, PHILIPS RES REP, V20, P578
[7]  
KOOI E, 1965, PHILIPS RES REP, V20, P315
[8]  
KOOI E, 1965, PHILIPS RES REP, V20, P595
[10]  
LEE RW, 1964, PHYS CHEM GLASSES-B, V5, P35