Selective wet etching of a GaAs/AlxGa1-xAs heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1-xAs/InyGa1-y heterojunction field effect transistor fabrication

被引：23

作者：

Lee, HJ ^{[1
]}

Tse, MS ^{[1
]}

Radhakrishnan, K ^{[1
]}

Prasad, K ^{[1
]}

Weng, J ^{[1
]}

Yoon, SF ^{[1
]}

Zhou, X ^{[1
]}

Tan, HS ^{[1
]}

Ting, SK ^{[1
]}

Leong, YC ^{[1
]}

机构：

[1] MINIST DEF,DEF SCI ORG,SINGAPORE,SINGAPORE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 35卷 / 1-3期

关键词：

semiconductor devices; gallium arsenide; heterostructures; etching;

D O I：

10.1016/0921-5107(95)01414-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The selective wet etching characteristics of GaAs/Al-x Ga1-xAs1-x systems in citric acid-hydrogen peroxide solution have been studied for x = 0.15, x = 0.2 and x = 0.3 respectively. A 4:1 ratio of citric acid (50% by weight)-H2O2 solution was found to be a better selective etchant than the more commonly used NH4OH-H2O2 solutions. The selectivity obtained was more than 110 for x = 0.3. The simple and reliable selective wet etchant was applied to the gate recess etching in the fabrication of pseudomorphic GaAs/AlxGa1-xAs/InyGa1-yAs heterojunction held effect transistors.

引用

页码：230 / 233

页数：4

共 9 条

[1] SELECTIVE ETCHING OF GAAS AND AL0.30GA0.70AS WITH CITRIC-ACID HYDROGEN-PEROXIDE SOLUTIONS [J].