COMPARISON OF ETHYLDIMETHYLINDIUM (EDMIN) AND TRIMETHYLINDIUM (TMIN) FOR GAINAS AND INP GROWTH BY LP-MOVPE

被引:44
作者
KNAUF, J [1 ]
SCHMITZ, D [1 ]
STRAUCH, G [1 ]
JURGENSEN, H [1 ]
HEYEN, M [1 ]
MELAS, A [1 ]
机构
[1] CVD,ALFA PROD,WOBURN,MA 01801
关键词
Crystals--Epitaxial Growth - Organometallics - Semiconducting Indium Compounds - X-Rays--Diffraction;
D O I
10.1016/0022-0248(88)90502-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Using TMIn and EDMIn we have carried out a direct comparison of growth behavior of both materials in the standard LP-MOVPE system by growing InP and GaInAs. At identical TMIn and EDMIn partial pressures, the growth rate of InP is nearly 100% higher by using the latter compound, indicating that the growth efficiency is increased due to a lower thermal stability of the EDMIn. High purity InP and GaInAs layers have been obtained for the first time from this material. InP layers grown on 2 inch substrates reproducibly show carrier concentrations around 1014 cm-3 and electron mobilities at 77 K of 109,000 cm2/V&middots. GaInAs layers with homogeneous film composition could be grown on 2 inch InP substrates. X-ray rocking curves show a FWHM of less than 30 arc sec which equals 10-4 lattice constants. Carrier concentrations were in the low 1015 cm-3 range and electron mobilities around 9500 cm2/V&middots at 300 K and 45,000 cm2/V&middots at 77 K reproducibly.
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页码:34 / 40
页数:7
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