OMVPE GROWTH OF INP AND GA0.47IN0.53AS USING ETHYLDIMETHYLINDIUM

被引：48

作者：

FRY, KL

KUO, CP

LARSEN, CA

COHEN, RM

STRINGFELLOW, GB

MELAS, A

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

[2] MORTON THIOKOL INC,ALFA PROD,DANVERS,MA 01923

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 02期

关键词：

D O I：

10.1007/BF02649909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：91 / 96

页数：6

相关论文

共 26 条

[1] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
BALIGA, BJ
GHANDHI, SK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687
[2] BASS SJ, 1979, I PHYS C SER B, V33, P1
[3] BHAT R, 1982, P SOC PHOTO-OPT INST, V323, P104, DOI 10.1117/12.934283
[4] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP
CAREY, KW
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 89 - 91
[5] DYE-LASER SELECTIVE SPECTROSCOPY IN BULK-GROWN INDIUM-PHOSPHIDE
DEAN, PJ
ROBBINS, DJ
BISHOP, SG
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (24): : 5567 - 5575
[6] Duchemin J.-P., 1981, INST PHYS CONF SE, V63, P89
[7] PHOTOLUMINESCENCE OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GALNAS
FRY, KL
KUO, CP
COHEN, RM
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 955 - 957
[8] PROPERTIES OF INP FILMS GROWN BY ORGANOMETALLIC VPE METHOD
FUKUI, T
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L395 - L397
[9] LIQUID-PHASE EPITAXY OF INP
HESS, K
STATH, N
BENZ, KW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212
[10] OMVPE GROWTH OF INP USING TMIN
HSU, CC
COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) : 8 - 12