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OMVPE GROWTH OF INP USING TMIN
被引:63
作者
:
HSU, CC
论文数:
0
引用数:
0
h-index:
0
HSU, CC
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1983年
/ 63卷
/ 01期
关键词
:
D O I
:
10.1016/0022-0248(83)90420-7
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:8 / 12
页数:5
相关论文
共 15 条
[1]
CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR
BENEKING, H
论文数:
0
引用数:
0
h-index:
0
BENEKING, H
ESCOBOSA, A
论文数:
0
引用数:
0
h-index:
0
ESCOBOSA, A
KRAUTLE, H
论文数:
0
引用数:
0
h-index:
0
KRAUTLE, H
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(03)
: 473
-
480
[2]
THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
BENZ, KW
RENZ, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
RENZ, H
WEIDLEIN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
WEIDLEIN, J
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
PILKUHN, MH
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(01)
: 185
-
192
[3]
CHATTERJEE AK, 1982, J PHYS PARIS C, V5, P491
[4]
HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 10
-
23
[5]
PROPERTIES OF INP FILMS GROWN BY ORGANOMETALLIC VPE METHOD
FUKUI, T
论文数:
0
引用数:
0
h-index:
0
FUKUI, T
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(07)
: L395
-
L397
[6]
Larsen C. B., UNPUB
[7]
USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS
MANASEVI.HM
论文数:
0
引用数:
0
h-index:
0
机构:
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
MANASEVI.HM
SIMPSON, WI
论文数:
0
引用数:
0
h-index:
0
机构:
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
SIMPSON, WI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 135
-
137
[8]
A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE
MOSS, RH
论文数:
0
引用数:
0
h-index:
0
MOSS, RH
EVANS, JS
论文数:
0
引用数:
0
h-index:
0
EVANS, JS
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 129
-
134
[9]
GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS
NAKANISI, T
论文数:
0
引用数:
0
h-index:
0
NAKANISI, T
UDAGAWA, T
论文数:
0
引用数:
0
h-index:
0
UDAGAWA, T
TANAKA, A
论文数:
0
引用数:
0
h-index:
0
TANAKA, A
KAMEI, K
论文数:
0
引用数:
0
h-index:
0
KAMEI, K
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 255
-
262
[10]
THE PREPARATION OF GA1-XINXAS BY ORGANOMETALLIC PYROLYSIS FOR HOMOJUNCTION LEDS
NOAD, JP
论文数:
0
引用数:
0
h-index:
0
NOAD, JP
SPRINGTHORPE, AJ
论文数:
0
引用数:
0
h-index:
0
SPRINGTHORPE, AJ
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(03)
: 601
-
620
←
1
2
→
共 15 条
[1]
CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR
BENEKING, H
论文数:
0
引用数:
0
h-index:
0
BENEKING, H
ESCOBOSA, A
论文数:
0
引用数:
0
h-index:
0
ESCOBOSA, A
KRAUTLE, H
论文数:
0
引用数:
0
h-index:
0
KRAUTLE, H
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(03)
: 473
-
480
[2]
THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
BENZ, KW
RENZ, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
RENZ, H
WEIDLEIN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
WEIDLEIN, J
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
PILKUHN, MH
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(01)
: 185
-
192
[3]
CHATTERJEE AK, 1982, J PHYS PARIS C, V5, P491
[4]
HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 10
-
23
[5]
PROPERTIES OF INP FILMS GROWN BY ORGANOMETALLIC VPE METHOD
FUKUI, T
论文数:
0
引用数:
0
h-index:
0
FUKUI, T
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(07)
: L395
-
L397
[6]
Larsen C. B., UNPUB
[7]
USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS
MANASEVI.HM
论文数:
0
引用数:
0
h-index:
0
机构:
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
MANASEVI.HM
SIMPSON, WI
论文数:
0
引用数:
0
h-index:
0
机构:
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
N AMER ROCKWELL CORP,RES & TECHNOL DIV,ANAHEIM,CA 92803
SIMPSON, WI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 135
-
137
[8]
A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE
MOSS, RH
论文数:
0
引用数:
0
h-index:
0
MOSS, RH
EVANS, JS
论文数:
0
引用数:
0
h-index:
0
EVANS, JS
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 129
-
134
[9]
GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS
NAKANISI, T
论文数:
0
引用数:
0
h-index:
0
NAKANISI, T
UDAGAWA, T
论文数:
0
引用数:
0
h-index:
0
UDAGAWA, T
TANAKA, A
论文数:
0
引用数:
0
h-index:
0
TANAKA, A
KAMEI, K
论文数:
0
引用数:
0
h-index:
0
KAMEI, K
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 255
-
262
[10]
THE PREPARATION OF GA1-XINXAS BY ORGANOMETALLIC PYROLYSIS FOR HOMOJUNCTION LEDS
NOAD, JP
论文数:
0
引用数:
0
h-index:
0
NOAD, JP
SPRINGTHORPE, AJ
论文数:
0
引用数:
0
h-index:
0
SPRINGTHORPE, AJ
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(03)
: 601
-
620
←
1
2
→