THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS

被引：48

作者：

BENZ, KW ^{[1
]}

RENZ, H ^{[1
]}

WEIDLEIN, J ^{[1
]}

PILKUHN, MH ^{[1
]}

机构：

[1] UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 01期

关键词：

D O I：

10.1007/BF02654908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：185 / 192

页数：8

共 11 条

[1]

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[3]

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[7]

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[8] INP EPITAXY WITH A NEW METALORGANIC COMPOUND [J].

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ELECTRONICS LETTERS, 1980, 16 (06) :228-228

[9] ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS [J].

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JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :201-226

[10] GROWTH OF SINGLE CRYSTAL GAP FROM ORGANOMETALLIC SOURCES [J].

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