INP EPITAXY WITH A NEW METALORGANIC COMPOUND

被引：28

作者：

RENZ, H ^{[1
]}

WEIDLEIN, J ^{[1
]}

BENZ, KW ^{[1
]}

PILKUHN, MH ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 06期

关键词：

D O I：

10.1049/el:19800163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：228 / 228

页数：1

共 8 条

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BONNET, M ;

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[2]

DUCHEMIN JP, 1978, P INT S GALLIUM ARSE, P10

[3] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

YINGLING, RD ;

MOUDY, LA .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :201-203

[4] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :487-489

[5]

FRIES W, UNPUBLISHED

[6] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS [J].

MANASEVI.HM ;

SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :135-137

[7]

MOUTOU P, 1978, I PHYS C 45

[8] ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS [J].

STRINGFELLOW, GB ;

HALL, HT .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :201-226

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