ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS

被引：34

作者：

STRINGFELLOW, GB

HALL, HT

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 03期

关键词：

D O I：

10.1007/BF02655624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：201 / 226

页数：26

相关论文

共 28 条

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[2] CASEY HC, 1978, HETEROSTRUCTURE LA A
[3] PREPARATION AND PROPERTIES OF GAAS DEVICES BY MOLECULAR-BEAM EPITAXY
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[7] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841
[8] VAPOR GROWTH AND PROPERTIES OF AIAS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : 1355 - +
[9] GARDNER M, UNPUBLISHED
[10] HALLAIS J, UNPUBLISHED