ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS

[21] KINETIC ASPECTS IN VAPOR-PHASE EPITAXY OF III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 130 - 141

[22] STEWART CEE, 1971, J CRYSTAL GROWTH, V8, P249

[23] VPE GROWTH OF ALXGA1-XAS [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 43 (01) : 47 - 60

[24] VPE GROWTH OF III-V SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1978, 8 : 73 - 98

[25] CALCULATION OF TERNARY-III-V AND QUATERNARY-III-V PHASE-DIAGRAMS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 21 - 34

[26] STRINGFELLOW GB, UNPUBLISHED

[27] STRINGFELLOW GB, 1977, J ELECTROCHEM SOC, V123, P916

[28] SOME MORPHOLOGICAL STUDIES FOR OPTIMUM GROWTH-CONDITIONS OF VAPOR EPITAXIAL GAAS1-XPX [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) : 85 - 92

[21] KINETIC ASPECTS IN VAPOR-PHASE EPITAXY OF III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 130 - 141

[22] STEWART CEE, 1971, J CRYSTAL GROWTH, V8, P249

[23] VPE GROWTH OF ALXGA1-XAS [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 43 (01) : 47 - 60

[24] VPE GROWTH OF III-V SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1978, 8 : 73 - 98

[25] CALCULATION OF TERNARY-III-V AND QUATERNARY-III-V PHASE-DIAGRAMS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 21 - 34

[26] STRINGFELLOW GB, UNPUBLISHED

[27] STRINGFELLOW GB, 1977, J ELECTROCHEM SOC, V123, P916

[28] SOME MORPHOLOGICAL STUDIES FOR OPTIMUM GROWTH-CONDITIONS OF VAPOR EPITAXIAL GAAS1-XPX [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) : 85 - 92