VPE GROWTH OF ALXGA1-XAS

被引：59

作者：

STRINGFELLOW, GB

HALL, HT

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 43卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90367-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：47 / 60

页数：14

共 32 条

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[3]

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[7]

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[8] VAPOR GROWTH OF GAAS1-XPX BY PYROLYSIS OF GA(CH3)3, ASH3 AND PH3 [J].

INOUE, M ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (06) :919-&

[9] PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FROM TRIMETHYLGALLIUM AND ARSINE [J].

ITO, S ;

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[10] VPE GROWTH OF N-ALAS ON GAAS FOR HETEROJUNCTION DEVICES [J].

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CALLAHAN, WM .

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