VAPOR GROWTH OF GAAS1-XPX BY PYROLYSIS OF GA(CH3)3, ASH3 AND PH3

被引:20
作者
INOUE, M
ASAHI, K
机构
关键词
D O I
10.1143/JJAP.11.919
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:919 / &
相关论文
共 2 条
[1]   USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].
MANASEVIT, HM ;
SIMPSON, WI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1725-+
[2]   EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE [J].
RAICHOUDBURY, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1745-+