VPE GROWTH OF N-ALAS ON GAAS FOR HETEROJUNCTION DEVICES

被引：15

作者：

JOHNSTON, WD ^{[1
]}

CALLAHAN, WM ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 10期

关键词：

D O I：

10.1149/1.2132631

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1524 / 1531

页数：8

相关论文

共 23 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] PLASMA OXIDATION OF GAAS
CHANG, RPH
SINHA, AK
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58
[3] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES
CHO, AY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : S31 - &
[4] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[5] SCREENING EFFECTS IN POLAR SEMICONDUCTORS
EHRENREICH, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 130 - 135
[6] VAPOR GROWTH AND PROPERTIES OF AIAS
ETTENBERG, M
SIGAI, AG
DREEBEN, A
GILBERT, SL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : 1355 - +
[7] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y
FRASER, DB
COOK, HD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1368 - &
[8] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &
[9] GA1-XALXAS-GAAS P-P-N HETEROJUNCTION SOLAR CELLS
HOVEL, HJ
WOODALL, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) : 1246 - 1252
[10] HIGH-PERFORMANCE SOLAR CELL MATERIAL - NORMAL-ALAS-PARA-GAAS PREPARED BY VAPOR-PHASE EPITAXY
JOHNSTON, WD
CALLAHAN, WM
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 150 - 152