HIGH-PERFORMANCE SOLAR CELL MATERIAL - NORMAL-ALAS-PARA-GAAS PREPARED BY VAPOR-PHASE EPITAXY

被引：37

作者：

JOHNSTON, WD ^{[1
]}

CALLAHAN, WM ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 03期

关键词：

D O I：

10.1063/1.88671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：150 / 152

页数：3

相关论文

共 11 条

[1] VAPOR GROWTH AND PROPERTIES OF AIAS
ETTENBERG, M
SIGAI, AG
DREEBEN, A
GILBERT, SL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : 1355 - +
[2] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &
[3] GA1-XALXAS-GAAS P-P-N HETEROJUNCTION SOLAR CELLS
HOVEL, HJ
WOODALL, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) : 1246 - 1252
[4] HUBER D, 1974, 1973 P IEEE PHOT SPE
[5] GAAS CONCENTRATOR SOLAR CELL
JAMES, LW
MOON, RL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (08) : 467 - 470
[6] JOHNSTON WD, TO BE PUBLISHED
[7] JOHNSTON WD, UNPUBLISHED
[8] Milnes AG, 1972, HETEROJUNCTIONS META
[9] PROPERTIES OF VAPOR-DEPOSITED ALUMINUM ARSENIDE
SIGAI, AG
ABRAHAMS, MS
BLANC, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) : 952 - &
[10] PARA-INP-NORMAL-CDS SOLAR CELLS AND PHOTOVOLTAIC DETECTORS
WAGNER, S
SHAY, JL
BACHMANN, KJ
BUEHLER, E
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (05) : 229 - 230