PROPERTIES OF VAPOR-DEPOSITED ALUMINUM ARSENIDE

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &

[2] STACKING FAULTS IN GAAS1-XPX ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) : 2491 - &

[3] TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (06) : 927 - &

[4] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[5] ABRAHAMS MS, TO BE PUBLISHED

[6] DONOR SPECTROSCOPY IN GAAS [J]. PHYSICS LETTERS A, 1968, A 28 (05) : 320 - +

[7] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 125 - &

[8] THERMAL EXPANSION OF ALAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +

[9] VAPOR GROWTH AND PROPERTIES OF AIAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : 1355 - +

[10] KRESSEL H, PRIVATE COMMUNICATIO

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &

[2] STACKING FAULTS IN GAAS1-XPX ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) : 2491 - &

[3] TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (06) : 927 - &

[4] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[5] ABRAHAMS MS, TO BE PUBLISHED

[6] DONOR SPECTROSCOPY IN GAAS [J]. PHYSICS LETTERS A, 1968, A 28 (05) : 320 - +

[7] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 125 - &

[8] THERMAL EXPANSION OF ALAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +

[9] VAPOR GROWTH AND PROPERTIES OF AIAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : 1355 - +

[10] KRESSEL H, PRIVATE COMMUNICATIO