DONOR SPECTROSCOPY IN GAAS

被引：19

作者：

BOSOMWORTH, DR

CRANDALL, RS

ENSTROM, RE

机构：

[1] RCA Laboratories, Princeton, NJ

来源：

PHYSICS LETTERS A | 1968年 / A 28卷 / 05期

关键词：

D O I：

10.1016/0375-9601(68)90309-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The far i.r. absorption and photoconductivity spectra of high purity n-type epitaxial GaAs has been measured. These spectra are interpreted on the basis of a shallow donor whose ionization energy is approximately 0.0046 eV. © 1968.

引用

页码：320 / +

页数：1

共 11 条

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[2] IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN N-GALLIUM ARSENIDE [J].

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OLIVIER, R .

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[4]

CRANDALL RS, UNPUBLISHED DATA

[5]

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[6]

MOTT NF, 1961, ADVANCES PHYSICS ED, V10

[7] ELECTRICAL PROPERTIES OF N-NORMAL TYPE GALLIUM ARSENIDE [J].

OLIVER, DJ .

PHYSICAL REVIEW, 1962, 127 (04) :1045-&

[8] FAR INFRA-RED PHOTOCONDUCTIVITY [J].

PUTLEY, EH .

PHYSICA STATUS SOLIDI, 1964, 6 (03) :571-614

[9] IMPACT IONIZATION BREAKDOWN OF N-TYPE EPITAXIAL GAAS AT LIQUID HELIUM TEMPERATURES [J].

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SOLID-STATE ELECTRONICS, 1968, 11 (04) :385-&

[10]

STILLMAN GE, TO BE PUBLISHED

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