IMPACT IONIZATION BREAKDOWN OF N-TYPE EPITAXIAL GAAS AT LIQUID HELIUM TEMPERATURES

被引：45

作者：

REYNOLDS, RA

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 04期

关键词：

D O I：

10.1016/0038-1101(68)90018-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：385 / &

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