ELECTRICAL PROPERTIES OF N-NORMAL TYPE GALLIUM ARSENIDE

[1] CHENKOV VA, FIZIKA TVERDOGO TELA, V2, P799

[2] CHENKOV VA, 1960, SOVIET PHYS SOLID ST, V2, P734

[3] CHIHCHAO L, 1960, SOV PHYS-SOL STATE, V2, P729

[4] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[5] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[6] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1960, 119 (04): : 1238 - 1245

[7] DIELECTRIC BREAKDOWN IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 21 - 32

[8] Hilsum C., 1961, SEMICONDUCTING 3 5 C

[9] HOT ELECTRONS AND CARRIER MULTIPLICATION IN SILICON AT LOW TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (07) : 334 - 336

[10] RATE PROCESSES AND LOW-TEMPERATURE ELECTRICAL CONDUCTION IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1958, 110 (04): : 986 - 988

[1] CHENKOV VA, FIZIKA TVERDOGO TELA, V2, P799

[2] CHENKOV VA, 1960, SOVIET PHYS SOLID ST, V2, P734

[3] CHIHCHAO L, 1960, SOV PHYS-SOL STATE, V2, P729

[4] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[5] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001

[6] IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1960, 119 (04): : 1238 - 1245

[7] DIELECTRIC BREAKDOWN IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 21 - 32

[8] Hilsum C., 1961, SEMICONDUCTING 3 5 C

[9] HOT ELECTRONS AND CARRIER MULTIPLICATION IN SILICON AT LOW TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (07) : 334 - 336

[10] RATE PROCESSES AND LOW-TEMPERATURE ELECTRICAL CONDUCTION IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1958, 110 (04): : 986 - 988