EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM

被引:52
作者
FRITZSCHE, H
LARKHOROVITZ, K
机构
来源
PHYSICAL REVIEW | 1959年 / 113卷 / 04期
关键词
D O I
10.1103/PhysRev.113.999
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:999 / 1001
页数:3
相关论文
共 17 条
[1]   THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J].
AIGRAIN, P .
PHYSICA, 1954, 20 (11) :978-982
[2]  
BROOKS H, 1956, ADV ELECTRONICS ELEC, V7, P87
[3]   IMPURITY CENTERS IN GE AND SI [J].
BURTON, JA .
PHYSICA, 1954, 20 (10) :845-854
[4]  
CLELAND, 1950, PHYS REV, V78, P814
[5]   IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].
CONWELL, EM .
PHYSICAL REVIEW, 1956, 103 (01) :51-60
[6]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[8]   ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].
FRITZSCHE, H .
PHYSICAL REVIEW, 1955, 99 (02) :406-419
[9]   RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].
HUNG, CS ;
GLIESSMAN, JR .
PHYSICAL REVIEW, 1954, 96 (05) :1226-1236
[10]   THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].
HUNG, CS ;
GLIESSMAN, JR .
PHYSICAL REVIEW, 1950, 79 (04) :726-727