GA1-XALXAS-GAAS P-P-N HETEROJUNCTION SOLAR CELLS

被引：69

作者：

HOVEL, HJ ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 09期

关键词：

Compendex;

D O I：

10.1149/1.2403671

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Solar cells

引用

页码：1246 / 1252

页数：7

共 17 条

[1]

ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P2047

[2] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].

CASEY, HC ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&

[3] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J].

CASEY, HC ;

PANISH, MB ;

CHANG, LL .

PHYSICAL REVIEW, 1967, 162 (03) :660-+

[4] THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS [J].

CHANG, LL .

SOLID-STATE ELECTRONICS, 1964, 7 (12) :853-859

[5] A MODIFIED FOURIER TRANSFORM METHOD FOR MULTIPLE SCATTERING CALCULATIONS IN A PLANE PARALLEL MIE ATMOSPHERE [J].

DAVE, JV ;

GAZDAG, J .

APPLIED OPTICS, 1970, 9 (06) :1457-&

[6]

Gobat AR, 1962, IRE T MIL ELECTRON, V6, P20, DOI DOI 10.1109/IRET-MIL.1962.5008393

[7] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :150-&

[8]

HOVEL HJ, 1972, SEP S GAAS BOULD COL, P205

[9] CONTROL OF OPTICAL LOSSES IN P-N JUNCTION LASERS BY USE OF A HETEROJUNCTION - THEORY AND EXPERIMENT [J].

KRESSEL, H ;

NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2019-+

[10] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J].

LORENZ, MR ;

CHICOTKA, R ;

PETTIT, GD ;

DEAN, PJ .

SOLID STATE COMMUNICATIONS, 1970, 8 (09) :693-&

← 1 2 →