SOME MORPHOLOGICAL STUDIES FOR OPTIMUM GROWTH-CONDITIONS OF VAPOR EPITAXIAL GAAS1-XPX

被引：14

作者：

WU, TY ^{[1
]}

机构：

[1] GM CORP,RES LABS,WARREN,MI 48090

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 21卷 / 01期

关键词：

D O I：

10.1016/0022-0248(74)90156-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：85 / 92

页数：8

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