ORIENTED GROWTH OF SEMICONDUCTORS .V. SURFACE FEATURES AND TWINS IN EPITAXIAL GALLIUM ARSENIDE

被引：22

作者：

HOLLOWAY, H

BOBB, LC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 07期

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D O I：

10.1063/1.1710019

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：2893 / &

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