ORIENTED GROWTH OF SEMICONDUCTORS .4. VACUUM DEPOSITION OF EPITAXIAL INDIUM ANTIMONIDE

被引：19

作者：

HOLLOWAY, H

RICHARDS, JL

BOBB, LC

PERRY, J

ZIMMERMAN, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 13期

关键词：

D O I：

10.1063/1.1708119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4694 / &

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