EPITAXIAL GROWTH OF BULK-QUALITY GALLIUM ARSENIDE ON GALLIUM ARSENIDE AND GERMANIUM SUBSTRATES

被引：2

作者：

BOBB, LC

HOLLOWAY, H

MAXWELL, KH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.1707949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3909 / &

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