STRUCTURE AND ADSORPTION CHARACTERISTICS OF (III) AND (III-) SURFACE OF INSB CLEANED BY ION BOMBARDMENT AND ANNEALING

被引：52

作者：

HANEMAN, D

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1960年 / 14卷

关键词：

D O I：

10.1016/0022-3697(60)90224-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：162 / 168

页数：7

相关论文

共 11 条

[1] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION
FARNSWORTH, HE
SCHLIER, RE
GEORGE, TH
BURGER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161
[2] ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION
FARNSWORTH, HE
SCHLIER, RE
GEORGE, TH
BURGER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) : 252 - 253
[3] PHOTOELECTRIC EMISSION AND WORK FUNCTIONS OF INSB, GAAS, BI2TE3 AND GERMANIUM
HANEMAN, D
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 205 - &
[4] HANEMAN D, 1959, J APPL PHYS
[5] INFLUENCE OF CRYSTAL ORIENTATION ON THE SURFACE BEHAVIOR OF INSB
LAVINE, MC
ROSENBERG, AJ
GATOS, HC
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1131 - 1132
[6] ROSENBERG AJ, 1958, Q PROG REP LINCOLN L, P13
[7] Schlier R.E., 1957, SEMICONDUCTOR SURFAC, P3
[8] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON
SCHLIER, RE
FARNSWORTH, HE
[J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) : 917 - 926
[9] ADSORPTION OF OXYGEN AND CARBON MONOXIDE ON TUNGSTEN
SCHLIER, RE
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1162 - 1167
[10] WHETTEN NR, 1959, 19TH ANN C PHYS EL, P147