MODULATED ELECTRON-SPIN-RESONANCE MEASUREMENTS AND DEFECT CORRELATION ENERGIES IN AMORPHOUS-SILICON

被引：29

作者：

LEE, JK ^{[1
]}

SCHIFF, EA ^{[1
]}

机构：

[1] SYRACUSE UNIV, DEPT PHYS, SYRACUSE, NY 13244 USA

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.68.2972

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that thermal modulation of the spin density is determined primarily by the defect correlation energy in intrinsic amorphous semiconductors, and is fairly insensitive to Fermi level position. We present temperature-dependent electron-spin-resonance (ESR) measurements for intrinsic hydrogenated amorphous silicon indicating a correlation energy of about 0.3 eV in low-defect-density material. We discuss the previous interpretation of depletion-width-modulated ESR in intrinsic a-Si:H as indicating a correlation energy of 0.0 eV.

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页码：2972 / 2975

页数：4

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