A-SI-H GAP STATES INVESTIGATED BY CPM AND SCLC

被引：58

作者：

KOCKA, J ^{[1
]}

VANECEK, M ^{[1
]}

SCHAUER, F ^{[1
]}

机构：

[1] TECH ACAD BRNO, CS-61200 BRNO, CZECHOSLOVAKIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90169-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：715 / 722

页数：8

相关论文

共 26 条

[1] DENSITY OF GAP-STATES IN N-TYPE AND P-TYPE A-SI-H
BEICHLER, J
MELL, H
WEBER, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 257 - 260
[2] LOCAL-STRUCTURE OF DOPANTS IN COMPENSATED AND SINGLY-DOPED AMORPHOUS-SILICON
BOYCE, JB
READY, SE
TSAI, CC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 345 - 348
[3] CAPACITANCE STUDIES OF OPTICAL AND THERMAL TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
GELATOS, AV
COHEN, JD
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 71 - 74
[4] PHOTOMODULATION OF THE PHOTOELECTRIC YIELD FROM A-SI-H
HIRABAYASHI, I
WINER, K
LEY, L
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 87 - 90
[5] SUB-GAP AND BAND EDGE OPTICAL-ABSORPTION IN A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 293 - 296
[6] THE DENSITY OF STATES IN UNDOPED AND DOPED AMORPHOUS HYDROGENATED SILICON
KOCKA, J
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) : 91 - 98
[7] KOCKA J, 1986, 18TH P ICPS STOCKH, P1081
[8] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
LANG, DV
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320
[9] MIRAMONTES R, 1986, 18TH P ICPS STOCKH, P1077
[10] ENERGY-LEVEL AND PHOTOIONIZATION CROSS-SECTION OF GAP STATES IN A-SI-H
OKUSHI, H
TANAKA, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 75 - 78