CAPACITANCE STUDIES OF OPTICAL AND THERMAL TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON

被引：6

作者：

GELATOS, AV

COHEN, JD

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90016-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：71 / 74

页数：4

相关论文

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[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY
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[3] ASSESSMENT OF LATTICE-RELAXATION EFFECTS IN TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON USING TRANSIENT PHOTOCAPACITANCE TECHNIQUES
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 722 - 724
[4] THE DENSITY OF STATES IN UNDOPED AND DOPED AMORPHOUS HYDROGENATED SILICON
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[6] GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01): : 33 - 57
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