GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY

被引：84

作者：

OKUSHI, H

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 52卷 / 01期

关键词：

D O I：

10.1080/13642818508243164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：33 / 57

页数：25

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