ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON

被引:118
作者
HIROSE, M [1 ]
SUZUKI, T [1 ]
DOHLER, GH [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1063/1.90749
中图分类号
O59 [应用物理学];
学科分类号
摘要
The localized state density distribution in the mobility gap of glow-discharge amorphous silicon has been determined from capacitance-voltage characteristics for metal/oxide/amorphous silicon (MOS) structures. This new method provides a smooth distribution of localized states throughout the mobility gap. The density of states increases from a minimum of the order of 1016 cm-3 eV-1 near midgap to more than 10 18-1019 cm-3 eV-1 within 0.2 eV of the band edges.
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页码:234 / 236
页数:3
相关论文
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