SURFACE-STATES AND BARRIER HEIGHTS OF METAL-AMORPHOUS SILICON SCHOTTKY BARRIERS

被引：78

作者：

WRONSKI, CR ^{[1
]}

CARLSON, DE ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1016/0038-1098(77)90999-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：421 / 424

页数：4

共 11 条

[1] [Anonymous], PHOTOEMISSIVE MAT
[2] CARLSON DE, 1976, 12TH P PHOT SPEC C B
[3] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[4] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[5] GOODMAN AM, 1964, SURF SCI, V1, P5
[6] MADEN A, 1976, J NONCRYST SOLIDS, V20, P239
[7] MOTT NF, 1971, ELECTRONIC PROCESSES
[8] SCHEWCHUN J, 1974, SOLID STATE ELECTRON, V17, P563
[9] SZE SM, 1963, PHYSICS SEMICONDUCTO
[10] SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES
WRONSKI, CR
CARLSON, DE
DANIEL, RE
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (09) : 602 - 605