INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE

[1] Brodsky A.H., 1972, J NONCRYST SOLIDES, V8, P739, DOI [10.1016/0022-3093(72)90221-9, DOI 10.1016/0022-3093(72)90221-9]

[2] BRODSKY MB, COMMUNICATION

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[4] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[5] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[6] CORBETT JW, 1966, SOLID STATE PHYSICS

[7] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &

[8] Engemann D., 1974, AMORPHOUS LIQUID SEM, P947

[9] FRITZSCHE H, 1973, ELECTRONIC STRUCTURA, P55

[10] HOPPING CONDUCTION IN AMORPHOUS-SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (03) : 563 - 566

[1] Brodsky A.H., 1972, J NONCRYST SOLIDES, V8, P739, DOI [10.1016/0022-3093(72)90221-9, DOI 10.1016/0022-3093(72)90221-9]

[2] BRODSKY MB, COMMUNICATION

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[4] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[5] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[6] CORBETT JW, 1966, SOLID STATE PHYSICS

[7] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &

[8] Engemann D., 1974, AMORPHOUS LIQUID SEM, P947

[9] FRITZSCHE H, 1973, ELECTRONIC STRUCTURA, P55

[10] HOPPING CONDUCTION IN AMORPHOUS-SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (03) : 563 - 566