ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS

被引：104

作者：

GOODMAN, NB ^{[1
]}

FRITZSCHE, H ^{[1
]}

机构：

[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 42卷 / 01期

关键词：

D O I：

10.1080/01418638008225645

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：149 / 165

页数：17

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