CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES

被引:75
作者
BEICHLER, J
FUHS, W
MELL, H
WELSCH, HM
机构
关键词
D O I
10.1016/0022-3093(80)90658-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:587 / 592
页数:6
相关论文
共 9 条
[1]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[2]   MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS (SIO2-SI E) [J].
NICOLLIAN, EH ;
GOETZBERGER, A .
APPLIED PHYSICS LETTERS, 1965, 7 (08) :216-+
[3]   DETECTION OF RECOMBINATION CENTERS IN SOLAR-CELLS FROM JUNCTION CAPACITANCE TRANSIENTS [J].
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :410-419
[4]  
SNELL AJ, UNPUBLISHED
[5]   INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION [J].
SPEAR, WE ;
LECOMBER, PG ;
SNELL, AJ .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03) :303-317
[6]  
SZE SM, 1969, PHYSICS SEMICONDUCTO
[7]   SCHOTTKY-BARRIER AND MIS TUNNEL-DIODES ON HYDROGENATED AMORPHOUS SILICON OF PHOTO-VOLTAIC QUALITY PREPARED BY CATHODE SPUTTERING - ELECTRIC PROPERTIES DETERMINED BY CAPACITANCE MEASUREMENTS [J].
VIKTOROVITCH, P ;
JOUSSE, D ;
CHENEVASPAULE, A ;
VIEUXROCHAS, L .
REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (01) :201-208
[8]   SURFACE-STATES AND BARRIER HEIGHTS OF METAL-AMORPHOUS SILICON SCHOTTKY BARRIERS [J].
WRONSKI, CR ;
CARLSON, DE .
SOLID STATE COMMUNICATIONS, 1977, 23 (07) :421-424
[9]   ELECTRONIC PROPERTIES OF AMORPHOUS SILICON IN SOLAR-CELL OPERATION [J].
WRONSKI, CR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :351-357