DETECTION OF RECOMBINATION CENTERS IN SOLAR-CELLS FROM JUNCTION CAPACITANCE TRANSIENTS

被引：17

作者：

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,CHICAGO,IL 60680

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 04期

关键词：

D O I：

10.1109/T-ED.1977.18749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：410 / 419

页数：10

共 22 条

[1] APPLICATION OF SMALL-SIGNAL TRANSMISSION-LINE EQUIVALENT CIRCUIT MODEL TO AC, DC AND TRANSIENT ANALYSIS OF SEMICONDUCTOR-DEVICES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (09) :941-949

[2] APPLICATION OF EQUIVALENT-CIRCUIT MODEL FOR SEMICONDUCTORS TO STUDY OF AU-DOPED P-N-JUNCTIONS UNDER FORWARD BIAS [J].

MAES, HE ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (10) :1131-1143

[3] STUDY OF THERMALLY INDUCED DEEP LEVELS IN AL-DOPED SI [J].

MARCHAND, RL ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :336-341

[4] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

SAH, CT ;

FORBES, L ;

ROSIER, LI ;

TASCH, AF ;

TOLE, AB .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :145-+

[5] BULK AND INTERFACE IMPERFECTIONS IN SEMICONDUCTORS [J].

SAH, CT .

SOLID-STATE ELECTRONICS, 1976, 19 (12) :975-990

[6] CONCENTRATION PROFILES OF RECOMBINATION CENTERS IN SEMICONDUCTOR JUNCTIONS EVALUATED FROM CAPACITANCE TRANSIENTS [J].

SAH, CT ;

NEUGROSCHEL, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1069-1074

[7] EQUIVALENT CIRCUIT MODELS IN SEMICONDUCTOR TRANSPORT FOR THERMAL, OPPTICAL, AUGER-IMPACT, AND TUNNELLING RECOMBINATION-GENERATION-TRAPPING PROCESSES [J].

SAH, CT .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (02) :541-+

[8] THERMALLY STIMULATED CAPACITANCE (TSCAP) IN P-N-JUNCTIONS [J].

SAH, CT ;

WALKER, JW ;

CHAN, WW ;

FU, HS .

APPLIED PHYSICS LETTERS, 1972, 20 (05) :193-&

[9] EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON [J].

SAH, CT ;

WANG, CT .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1767-1776

[10] THERMALLY STIMULATED CAPACITANCE FOR SHALLOW MAJORITY-CARRIER TRAPS IN EDGE REGION OF SEMICONDUCTOR JUNCTIONS [J].

SAH, CT ;

WALKER, JW .

APPLIED PHYSICS LETTERS, 1973, 22 (08) :384-385

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