STUDY OF THERMALLY INDUCED DEEP LEVELS IN AL-DOPED SI

被引：27

作者：

MARCHAND, RL

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：336 / 341

页数：6

共 17 条

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