THERMALLY STIMULATED CAPACITANCE (TSCAP) IN P-N-JUNCTIONS

[1] 2. CORRELATIONS BETWEEN THERMOLUMINESCENCE AND THERMALLY STIMULATED CONDUCTIVITY [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (04): : 1596 - +

[2] DETERMINATION OF ELECTRON TRAPPING PARAMETERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 21 - &

[3] BUEHLER MG, TO BE PUBLISHED

[4] CAPACITIVES METHODS OF DETERMINATION OF ENERGY DISTRIBUTION OF ELECTRON TRAPS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (19) : 1627 - +

[5] RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 548 - &

[6] THERMAL RELEASE OF TRAPPED SPACE CHARGE IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (519): : 141 - &

[7] DETERMINATION OF DEEP LEVEL CENTER ENERGY AND CONCENTRATION BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS USING REVERSE-BIASED P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 182 - &

[8] EQUATIONS FOR THERMOLUMINESCENCE AND THERMALLY STIMULATED CURRENT AS DERIVED FROM SIMPLE MODELS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (07) : 1693 - &

[9] RANDALL JT, 1945, PROC R SOC LON SER-A, V184, P366

[10] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +

[1] 2. CORRELATIONS BETWEEN THERMOLUMINESCENCE AND THERMALLY STIMULATED CONDUCTIVITY [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (04): : 1596 - +

[2] DETERMINATION OF ELECTRON TRAPPING PARAMETERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 21 - &

[3] BUEHLER MG, TO BE PUBLISHED

[4] CAPACITIVES METHODS OF DETERMINATION OF ENERGY DISTRIBUTION OF ELECTRON TRAPS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (19) : 1627 - +

[5] RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 548 - &

[6] THERMAL RELEASE OF TRAPPED SPACE CHARGE IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (519): : 141 - &

[7] DETERMINATION OF DEEP LEVEL CENTER ENERGY AND CONCENTRATION BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS USING REVERSE-BIASED P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 182 - &

[8] EQUATIONS FOR THERMOLUMINESCENCE AND THERMALLY STIMULATED CURRENT AS DERIVED FROM SIMPLE MODELS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (07) : 1693 - &

[9] RANDALL JT, 1945, PROC R SOC LON SER-A, V184, P366

[10] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +