RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON

被引：14

作者：

DAVIES, DE

ROOSILD, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 12期

关键词：

D O I：

10.1063/1.1653534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：548 / &

共 9 条

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[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

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[5]

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SCHADE, H ;

HERRICK, D .

SOLID-STATE ELECTRONICS, 1969, 12 (11) :857-&

[7] DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION [J].

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[8] A TECHNIQUE FOR TRAP DETERMINATIONS IN LOW-RESISTIVITY SEMICONDUCTORS [J].

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[9]

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