BULK AND INTERFACE IMPERFECTIONS IN SEMICONDUCTORS

被引：97

作者：

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 12期

关键词：

D O I：

10.1016/0038-1101(76)90176-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：975 / 990

页数：16

共 39 条

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CHAN, WW ;

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SAH, CT .

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[6] MULTIVALLEY EFFECTIVE-MASS APPROXIMATION FOR DONOR STATES IN SILICON .2. DEEP-LEVEL GROUP-VI DOUBLE-DONOR IMPURITIES [J].

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PHYSICAL REVIEW B, 1971, 4 (10) :3482-&

[7] MULTIVALLEY EFFECTIVE-MASS APPROXIMATION FOR DONOR STATES IN SILICON .1. SHALLOW-LEVEL GROUP-V IMPURITIES [J].

NING, TH ;

SAH, CT .

PHYSICAL REVIEW B, 1971, 4 (10) :3468-&

[8] GROUP-VI DONOR IMPURITIES IN SILICON [J].

NING, TH .

PHYSICS LETTERS A, 1971, A 35 (04) :238-&

[9] MULTI-VALLEY EFFECTIVE-MASS APPROXIMATION OF SHALLOW DONOR LEVELS IN SILICON [J].

NING, TH ;

SAH, CT .

SOLID STATE COMMUNICATIONS, 1970, 8 (22) :1893-&

[10] THEORY OF IMPURITY STATES IN SEMICONDUCTORS [J].

PANTELIDES, S ;

SAH, CT .

SOLID STATE COMMUNICATIONS, 1972, 11 (12) :1713-1718

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