DEFECT CENTERS IN BORON-IMPLANTED SILICON

被引：17

作者：

CHAN, WW

SAH, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.1659853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4768 / &

共 26 条

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[2]

Bicknell R. W., 1970, Radiation Effects, V6, P45, DOI 10.1080/00337577008235044

[3] DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J].

BOWER, RW ;

BARON, R ;

MAYER, JW ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1966, 9 (05) :203-&

[4]

Chadderton L. T., 1971, Radiation Effects, V7, P129, DOI 10.1080/00337577108232573

[5]

Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043

[6] POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON [J].

DAVIES, DE .

APPLIED PHYSICS LETTERS, 1969, 14 (07) :227-&

[7] IMPLANTED PROFILES OF BORON, PHOSPHORUS AND ARSENIC IN SILICON FROM JUNCTION DEPTH MEASUREMENTS [J].

DAVIES, DE .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :229-&

[8] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[9] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J].

DEARNALEY, G ;

FREEMAN, JH ;

GARD, GA ;

WILKINS, MA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :587-+

[10] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J].

FLADDA, G ;

BJORKQVIST, K ;

ERIKSSON, L ;

SIGURD, D .

APPLIED PHYSICS LETTERS, 1970, 16 (08) :313-+

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