IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS

被引：87

作者：

DEARNALEY, G

FREEMAN, JH

GARD, GA

WILKINS, MA

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1968年 / 46卷 / 06期

关键词：

D O I：

10.1139/p68-073

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：587 / +

页数：1

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[8] IMPLANTATION PROFILES FOR 40KEV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES (TEMPERATURE DEPENDENCE CHANNELING E/T)
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