IMPLANTED PROFILES OF BORON, PHOSPHORUS AND ARSENIC IN SILICON FROM JUNCTION DEPTH MEASUREMENTS

被引：21

作者：

DAVIES, DE

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 02期

关键词：

D O I：

10.1016/0038-1101(70)90055-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：229 / &

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