IMPURITY DISTRIBUTION PROFILES IN ION-IMPLANTED SILICON

被引：31

作者：

KLEINFEL.WJ

JOHNSON, WS

GIBBONS, JF

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1968年 / 46卷 / 06期

关键词：

D O I：

10.1139/p68-074

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：597 / &

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