PHOTOIONIZATION CROSS-SECTIONS OF HOLES AT ZINC CENTERS IN SILICON

[1] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415

[2] KORNILOV BV, 1964, SOV PHYS-SOL STATE, V5, P2420

[3] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[4] THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 41 - +

[5] PHOTOIONIZATION OF ELECTRONS AT SULFUR CENTERS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 4000 - &

[6] PHOTOTHERMAL IONIZATION VIA EXCITED STATES OF SULFUR DONOR IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (12) : 917 - &

[7] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[8] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .2. RECOMBINATION CENTERS IN SURFACE SPACE-CHARGE LAYER [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 14 (01): : 59 - 70

[9] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .1. GENERAL THEORY AND APPLICATIONS TO INITIALLY DEPLETED SURFACE WITHOUT SURFACE STATE [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01): : 297 - +

[10] PHOTOELECTRONIC PROPERTIES OF ZINC IMPURITY IN SILICON [J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1328 - &

[1] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415

[2] KORNILOV BV, 1964, SOV PHYS-SOL STATE, V5, P2420

[3] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[4] THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 41 - +

[5] PHOTOIONIZATION OF ELECTRONS AT SULFUR CENTERS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 4000 - &

[6] PHOTOTHERMAL IONIZATION VIA EXCITED STATES OF SULFUR DONOR IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (12) : 917 - &

[7] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[8] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .2. RECOMBINATION CENTERS IN SURFACE SPACE-CHARGE LAYER [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 14 (01): : 59 - 70

[9] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .1. GENERAL THEORY AND APPLICATIONS TO INITIALLY DEPLETED SURFACE WITHOUT SURFACE STATE [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01): : 297 - +

[10] PHOTOELECTRONIC PROPERTIES OF ZINC IMPURITY IN SILICON [J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1328 - &