ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS

被引：739

作者：

Lucovsky, G. ^{[1
]}

机构：

[1] Philco Appl Res Lab, Blue Bell, PA USA

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 09期

关键词：

D O I：

10.1016/0038-1098(65)90039-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The wavelength dependence of the photoionization cross section for deep, semiconductor impurity centers, e. g., In doped Si, is calculated using a model in which the ground state wave function is determined solely by a suitable short range ion core potential. Absorption to excited states is explained by a long range, unperturbed coulomb potential.

引用

页码：299 / 302

页数：4

共 11 条

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