PHOTOIONIZATION OF ELECTRONS AT SULFUR CENTERS IN SILICON

被引：44

作者：

ROSIER, LL

SAH, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 10期

关键词：

D O I：

10.1063/1.1659717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4000 / &

共 15 条

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[9] DIRECT OBSERVATION OF MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW-TEMPERATURE HIGH-FREQUENCY PHOTOCAPACITANCE [J].

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[10] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

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