THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON

[1] SOLID SOLUBILITY OF ZN IN SI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (01) : 173 - +

[2] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[3] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1390 - 1393

[4] DETERMINATION OF DEEP LEVEL CENTER ENERGY AND CONCENTRATION BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS USING REVERSE-BIASED P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 182 - &

[5] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[6] FU HS, 1972, B AM PHYS SOC, V17, P307

[7] FU HS, TO BE PUBLISHED

[8] DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 379 - 383

[9] GLOVER HG, 1972, IEEE T ELECTRON DEVI, V19, P138

[10] HARKE JL, 1968, J APPL PHYS, V39, P4871

[1] SOLID SOLUBILITY OF ZN IN SI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (01) : 173 - +

[2] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[3] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1390 - 1393

[4] DETERMINATION OF DEEP LEVEL CENTER ENERGY AND CONCENTRATION BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS USING REVERSE-BIASED P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 182 - &

[5] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[6] FU HS, 1972, B AM PHYS SOC, V17, P307

[7] FU HS, TO BE PUBLISHED

[8] DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 379 - 383

[9] GLOVER HG, 1972, IEEE T ELECTRON DEVI, V19, P138

[10] HARKE JL, 1968, J APPL PHYS, V39, P4871