SOLID SOLUBILITY OF ZN IN SI

[1] BLOUKE MM, IN PRESS

[2] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1390 - 1393

[3] DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 379 - 383

[4] OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (04) : 71 - 73

[5] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2421 - &

[6] LEBEDEV AA, 1969, SOV PHYS SEMICOND+, V2, P1295

[7] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701

[8] MAHER AT, 1969, IEEE T ELECTR DEVEL, VED16

[9] PUTLEY EH, 1968, HALL EFFECT SEMICOND

[10] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396

[1] BLOUKE MM, IN PRESS

[2] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1390 - 1393

[3] DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 379 - 383

[4] OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (04) : 71 - 73

[5] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2421 - &

[6] LEBEDEV AA, 1969, SOV PHYS SEMICOND+, V2, P1295

[7] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701

[8] MAHER AT, 1969, IEEE T ELECTR DEVEL, VED16

[9] PUTLEY EH, 1968, HALL EFFECT SEMICOND

[10] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396