IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE

被引：149

作者：

BUEHLER, MG

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90068-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：69 / +

页数：1

共 17 条

[1] BRAUNLICH P, 1967, J APPL PHYS, V38, P2516
[2] Bube RH., 1960, PHOTOCONDUCTIVITY SO
[3] BUEHLER MG, 1970, F1962868C0184 CONTR
[4] PROPERTIES OF GOLD IN SILICON
BULLIS, WM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &
[5] EFFECTS OF VARIOUS HEATING RATES ON GLOW CURVES
CHEN, R
WINER, SAA
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5227 - &
[6] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[8] HALL RN, 1951, PHYS REV, V83, P228
[9] 1. PHENOMENOLOGICAL THEORY OF THERMOLUMINESCENCE
KELLY, P
BRAUNLIC.P
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1587 - &
[10] MOLL JL, 1964, PHYSICS SEMICONDUCTO