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CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .1. GENERAL THEORY AND APPLICATIONS TO INITIALLY DEPLETED SURFACE WITHOUT SURFACE STATE
被引:68
作者
:
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
FU, HS
论文数:
0
引用数:
0
h-index:
0
FU, HS
机构
:
来源
:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
1972年
/ 11卷
/ 01期
关键词
:
D O I
:
10.1002/pssa.2210110131
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:297 / +
页数:1
相关论文
共 37 条
[1]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 760
-
+
[2]
INVESTIGATION OF DEEP-DEPLETION REGIME OF MOS STRUCTURES USING RAMP-RESPONSE METHOD
BULUCEA, CD
论文数:
0
引用数:
0
h-index:
0
BULUCEA, CD
[J].
ELECTRONICS LETTERS,
1970,
6
(15)
: 479
-
+
[3]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[4]
EFFECT OF O+ AND NE+ IMPLANTATION ON SURFACE CHARACTERISTICS OF THERMALLY OXIDIZED SI
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
CROWDER, BL
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1731
-
&
[5]
APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
: 601
-
&
[6]
BEHAVIOR OF MOS INVERSION LAYERS AT LOW TEMPERATURE
GOETZBER.A
论文数:
0
引用数:
0
h-index:
0
GOETZBER.A
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 787
-
&
[7]
EXPERIMENTAL STUDY OF SEMICONDUCTOR SURFACE CONDUCTIVITY
GROSVALET, J
论文数:
0
引用数:
0
h-index:
0
GROSVALET, J
JUND, C
论文数:
0
引用数:
0
h-index:
0
JUND, C
MOTSCH, C
论文数:
0
引用数:
0
h-index:
0
MOTSCH, C
POIRIER, R
论文数:
0
引用数:
0
h-index:
0
POIRIER, R
[J].
SURFACE SCIENCE,
1966,
5
(01)
: 49
-
+
[8]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[9]
SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(08)
: 2458
-
&
[10]
ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 781
-
+
←
1
2
3
4
→
共 37 条
[1]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 760
-
+
[2]
INVESTIGATION OF DEEP-DEPLETION REGIME OF MOS STRUCTURES USING RAMP-RESPONSE METHOD
BULUCEA, CD
论文数:
0
引用数:
0
h-index:
0
BULUCEA, CD
[J].
ELECTRONICS LETTERS,
1970,
6
(15)
: 479
-
+
[3]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[4]
EFFECT OF O+ AND NE+ IMPLANTATION ON SURFACE CHARACTERISTICS OF THERMALLY OXIDIZED SI
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
CROWDER, BL
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1731
-
&
[5]
APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
: 601
-
&
[6]
BEHAVIOR OF MOS INVERSION LAYERS AT LOW TEMPERATURE
GOETZBER.A
论文数:
0
引用数:
0
h-index:
0
GOETZBER.A
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 787
-
&
[7]
EXPERIMENTAL STUDY OF SEMICONDUCTOR SURFACE CONDUCTIVITY
GROSVALET, J
论文数:
0
引用数:
0
h-index:
0
GROSVALET, J
JUND, C
论文数:
0
引用数:
0
h-index:
0
JUND, C
MOTSCH, C
论文数:
0
引用数:
0
h-index:
0
MOTSCH, C
POIRIER, R
论文数:
0
引用数:
0
h-index:
0
POIRIER, R
[J].
SURFACE SCIENCE,
1966,
5
(01)
: 49
-
+
[8]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[9]
SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(08)
: 2458
-
&
[10]
ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 781
-
+
←
1
2
3
4
→