THERMAL CAPTURE OF ELECTRONS AND HOLES AT ZINC CENTERS IN SILICON

[1] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] DUH CY, 1967, T I ELECT ELECTRON E, VED14, P46

[4] GLINCHUK KD, 1964, SOV PHYS-SOL STATE, V5, P2197

[5] GLINCHUK KD, 1964, SOV PHYS-SOL STATE, V5, P1412

[6] CASCADE CAPTURE OF ELECTRONS BY IONIZED IMPURITIES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A): : A250 - &

[7] HERMAN JA, IN PRESS

[8] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415

[9] KORNILOV BV, 1966, FIZ TVERD TELA+, V8, P157

[10] KORNILOV BV, 1966, FIZ TVERD TELA+, V7, P2794

[1] RECOMBINATION MECHANISMS [J]. PHYSICA STATUS SOLIDI, 1968, 29 (01): : 9 - +

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] DUH CY, 1967, T I ELECT ELECTRON E, VED14, P46

[4] GLINCHUK KD, 1964, SOV PHYS-SOL STATE, V5, P2197

[5] GLINCHUK KD, 1964, SOV PHYS-SOL STATE, V5, P1412

[6] CASCADE CAPTURE OF ELECTRONS BY IONIZED IMPURITIES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A): : A250 - &

[7] HERMAN JA, IN PRESS

[8] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415

[9] KORNILOV BV, 1966, FIZ TVERD TELA+, V8, P157

[10] KORNILOV BV, 1966, FIZ TVERD TELA+, V7, P2794